PTFA260851F V1 R250

PTFA260851E PTFA260851F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 – 2700 MHz Description The PTFA260851E and PTFA260851F are 85-watt LDMOS FETs designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. VDS = 28 V, IDQ = 900 mA -20 2.62 GHz 2.68 GHz 2.62 15 • Thermally-enhanced, Pb-free and RoHS-compliant packages • Broadband internal matching • Typical WiMAX performance at 2680 MHz, 28 V - Average output power = 16 W - Linear Gain = 14 dB - Efficiency = 22% - Error Vector Magnitude = –29 dB • Typical CW performance, 2680 MHz, 28 V - Output power at P–1dB = 100 W - Efficiency = 47% -25 Efficiency -30 10 -35 EVM EVM (dBc) Efficiency (%) 20 PTFA260851F Package H-31248-2 Features WiMAX EVM and Efficiency vs. Output Power 25 PTFA260851E Package H-30248-2 5 -40 • Integrated ESD protection: Human Body Model, Class 2 (minimum) 0 -45 • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 85 W (CW) output power 15 20 25 30 35 40 45 Output Power (dBm) RF Characteristics WiMAX Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 900 mA, POUT = 16 W average, ƒ = 2680 MHz, modulation = 64 QAM 2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 14 — dB Drain Efficiency ηD — 22 — % EVM — –29 — dB Error Vector Magnitude All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 11 Rev. 02.1, 2009-02-20 PTFA260851E PTFA260851F Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 900 mA, POUT = 85 W PEP, ƒ = 2680 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 13 14 — dB Drain Efficiency ηD 33 36 — % IMD — –30 –28 dBc Intermodulation Distortion 46.5 dBm (PEP) DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA VDS = 63 V, V GS = 0 V IDSS — — 10.0 µA RDS(on) — 0.095 — Ω On-State Resistance VGS = 10 V, V DS = 0.1 V Operating Gate Voltage VDS = 28 V, IDQ = 900 mA VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 437.5 W 2.5 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 85 W CW) RθJC 0.4 °C/W Ordering Information Type and Version Package Type Package Description Marking PTFA260851E V1 H-30248-2 Thermally-enhanced slotted flange, single-ended PTFA260851E PTFA260851F V1 H-31248-2 Thermally-enhanced earless flange, single-ended PTFA260851F *See Infineon distributor for future availability. Data Sheet 2 of 11 Rev. 02.1, 2009-02-20 PTFA260851E PTFA260851F Confidential, Limited Internal Distribution Typical Performance (data taken in a production test fixture) Gain & Efficiency vs. Output Power Two–tone Broadband Performance VDD = 28 V, IDQ = 900 mA, ƒ = 2.68 GHz 15 50 40 Gain 13 30 12 20 Efficiency 11 10 -20 Intermodulation Distortion (dBc) 60 Drain Efficiency (%) 16 14 Gain (dB) VDD = 28 V, IDQ = 900 mA, POUT = 42.5 W 0 10 25 30 35 40 45 50 55 3rd Order -30 -40 5th -50 7th -60 2580 2600 2620 2640 Output Power (dBm) Frequency (MHz) Two–tone Performance, various voltages Two–tone Broadband Performance IDQ = 900 mA, ƒ = 2.68 GHz, tone spacing = 1 MHz VDD = 28 V, IDQ = 900 mA, POUT = 42.5 W 10 Efficiency 0 50 -20 VDD = 26 V 45 -25 40 -30 VDD = 28 V VDD = 32 V 35 30 25 -10 20 Input Return Loss 15 10 -20 -30 2590 2610 2630 2650 2670 2690 IM3, 5, 7 (dBc) Gain Drain Efficiency (%) Gain (dB), Return Loss (dB) 20 -35 IM3 -40 -45 IM5 -50 -55 5 -60 0 2710 -65 IM7 25 30 35 40 45 50 Output Power (dBm ) Frequency (MHz) Data Sheet 2660 2680 2700 2720 3 of 11 Rev. 02.1, 2009-02-20 PTFA260851E PTFA260851F Confidential, Limited Internal Distribution Typical Performance (cont.) 3-Carrier CDMA2000 Performance, various voltages Two–tone Performance, various voltages IDQ = 900 mA, ƒ = 2.68 GHz, tone spacing = 1 MHz IDQ = 900 mA, ƒ = 2.68 GHz, PAR = 7 dB Efficiency 40 Drain Efficiency (%) VDD = 26 V VDD = 28 V 16 40 30 15 Gain 14 20 13 10 0 12 25 30 35 40 45 30 Efficiency 15 VDD = 32 V 14 20 Gain 13 10 12 0 30 50 35 40 45 50 Output Power (dBm) Output Power (dBm) 3-Carrier CDMA2000 Performance Adjacent Channel Power Ratio WCDMA 3GPP Single-carrier Performance, various voltages VDD = 28 V, IDQ = 900 mA, ƒ = 2.68 GHz, PAR = 7 dB IDQ = 900 mA, ƒ = 2.68 GHz, PAR = 8 dB -30 VDD = 26 V VDD = 28 V 40 16 VDD = 32 V Drain Efficiency (%) -40 ACPR (dBc) VDD = 26 V VDD = 28 V Alt2 2.5 MHz -50 Adj 35 MHz -60 -70 30 15 20 14 Gain 10 Gain (dB) Gain (dB) VDD = 32 V 16 Gain (dB) 50 17 13 Efficiency Alt1 2.5 MHz -80 0 25 30 35 40 45 50 Output Power (dBm) Data Sheet 12 25 30 35 40 45 Output Power (dBm) 4 of 11 Rev. 02.1, 2009-02-20 PTFA260851E PTFA260851F Confidential, Limited Internal Distribution Typical Performance (cont.) WCDMA 3GPP 2-carrier Performance, various voltages WCDMA 3GPP Single-carrier Performance IDQ = 900 mA, ƒ = 2.68 GHz, PAR = 8 dB -30 ACPR (dBc), IM3U (dB) Intermodulation Distortion (dBc) -30 IDQ = 900 mA, ƒ = 2.68 GHz, PAR = 8 dB, 10 MHz spacing -35 -40 32 V -45 28 V -50 ACPR IMD 3 -35 -40 32 V -45 -50 -55 25 30 35 40 45 25 50 30 35 40 45 Output Power (dBm) Output Power (dBm) WCDMA 3GPP 2-carrier Performance Bias Voltage vs. Temperature VDD = 28 V & 32 V, IDQ = 900 mA, ƒ = 2.68 GHz, PAR = 8 dB, 10 MHz spacing Voltage normalized to typical gate voltage, series show current 16 VDD = 28 V VDD = 32 V 15 Gain 20 14 10 13 Efficiency 0 Gain (dB) 30 Normalized Bias Voltage (V) 40 Drain Efficiency (%) 28 V 26 V 26 V -55 30 35 40 45 1.02 0.56 A 0.93 A 1.01 1.39 A 1.00 2.78 A 0.99 4.17 A 5.56 A 0.98 6.95 A 0.97 8.34 A 0.96 0 20 40 60 80 100 Case Temperature (°C) Output Power (dBm) Data Sheet 0.19 A 0.95 -20 12 25 1.03 5 of 11 Rev. 02.1, 2009-02-20 PTFA260851E PTFA260851F Confidential, Limited Internal Distribution Broadband Circuit Impedance Z Source Ω Frequency D Z Load G S R --> R jX R jX 2600 4.4 3.8 1.8 2.5 2620 4.4 3.9 1.8 2.7 2650 4.3 4.2 1.7 2.9 2680 4.2 4.5 1.7 3.2 2700 4.2 4.7 1.6 3.3 0 .1 2700 MHz 2700 MHz 2600 MHz 0.5 0.4 0.3 0.0 2600 MHz DTOW ARD L OA - W AV E LE NGT H S T OW A RD G E NE RAT O 0. 2 Z Load Z Source 0.2 Z0 = 50 Ω MHz 0.1 Z Source Z Load Ω See next page for circuit information Data Sheet 6 of 11 Rev. 02.1, 2009-02-20 PTFA260851E PTFA260851F Confidential, Limited Internal Distribution Reference Circuit C1 0.001µF R2 1.3K V R1 1.2K V QQ1 LM7805 V DD Q1 BCP56 C2 0.001µF R3 2K V C3 0.001µF R4 2K V R5 5.1K V L1 R6 10 V C4 10µF 35V C5 0.01µF VDD R7 5.1K V C6 4.5pF C9 4.5pF l7 R8 10 V C10 1µF C11 0.01µF C12 10µF 50V l8 l6 C7 4.5pF RF_IN l1 DUT l2 l3 l4 C18 4.5pF l5 l10 C8 1.5pF l11 l12 l13 l14 RF_OUT C17 0.1pF l9 L2 a 2 6 0 8 5 1 e f _ b d _ 2 - 1 - 0 8 C13 4.5pF C14 1µF C15 0.01µF C16 10µF 50V Reference circuit schematic for ƒ = 2650 MHz Circuit Assembly Information DUT PCB PTFA260851E or PTFA260851F 0.76 mm [.030"] thick, εr = 4.5 LDMOS Transistor TMM4 Microstrip Electrical Characteristics at 2650 MHz1 Dimensions: L x W ( mm) Dimensions: L x W (in.) l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 l11 (taper) l12 l13 l14 0.121 0.135 0.021 0.028 0.079 0.008 0.272 0.278 0.278 0.060 0.113 0.048 0.095 0.070 λ, 46.9 Ω λ, 40.5 Ω λ, 40.5 Ω λ, 14.7 Ω λ, 8.3 Ω λ, 57.9 Ω λ, 57.9 Ω λ, 49.3 Ω λ, 49.3 Ω λ, 5.2 Ω λ, 5.2 Ω / 49.3 Ω λ, 49.3 Ω λ, 49.3 Ω λ, 49.3 Ω 7.42 x 1.52 8.20 x 1.93 1.27 x 1.93 1.60 x 7.54 4.37 x 14.66 0.51 x 1.04 16.79 x 1.04 16.89 x 1.40 16.89 x 1.40 3.28 x 24.36 6.73 x 24.36 / 1.40 2.97 x 1.40 5.84 x 1.40 4.29 x 1.40 2 oz. copper 0.292 0.323 0.050 0.063 0.172 0.020 0.661 0.665 0.665 0.129 0.265 0.117 0.230 0.169 x 0.060 x 0.076 x 0.076 x 0.297 x 0.577 x 0.041 x 0.041 x 0.055 x 0.055 x 0.959 x 0.959 / 0.055 x 0.055 x 0.055 x 0.055 1Electrical characteristics are rounded. Data Sheet 7 of 11 Rev. 02.1, 2009-02-20 PTFA260851E PTFA260851F Confidential, Limited Internal Distribution Reference Circuit (cont.) R5 C5 R3 QQ1 C1 R4 C2 R1 R2 C4 C9 LM C10 L1 Q1 R6 R7 C6 RF_IN VDD C3 VDD C12 C7 C11 C18 R8 C8 C17 RF_OUT C15 VDD C16 L2 C14 C13 a260851ef _cd_1-3-08 Reference circuit assembly diagram (not to scale)* Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 C4 C5, C11, C15 C6, C7, C9, C13, C18 C8 C10, C14 C12, C16 C17 L1, L2 Q1 QQ1 R1 R2 R3 R4 R5, R7 R6, R8 Capacitor, 0.001 µF Tantalum capacitor, 10 µF, 35 V Capacitor, 0.01 µF Ceramic capacitor, 4.5 pF Digi-Key Digi-Key ATC ATC PCC1772CT-ND 399-1655-2-ND 200B 103 100B 4R5 Ceramic capacitor, 1.5 pF Capacitor, 1 µF Tantalum capacitor, 10 µF, 50 V Ceramic capacitor, 0.1 pF Ferrite, 8.9 mm Transistor Voltage regulator Chip resistor 1.2 k-ohms Chip resistor 1.3 k-ohms Chip resistor 2 k-ohms Potentiometer 2 k-ohms Chip resistor 5.1 k-ohms Chip resistor 10 ohms ATC ATC Garrett Electronics ATC Elna Magnetics Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key 100B 1R5 920C105 TPSE106K050R0400 100A 0R1 BDS 4.6/3/8.9-4S2 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P5.1KECT-ND P10ECT-ND *Gerber Files for this circuit available on request Data Sheet 8 of 11 Rev. 02.1, 2009-02-20 PTFA260851E PTFA260851F Confidential, Limited Internal Distribution Package Outline Specifications Package H-30248-2 (45° X 2.72 [.107]) CL 4.83±0.51 [.190±.020] D FLANGE 9.78 [.385] LID 9.40+0.10 –0.15 19.43 ±0.51 [.370+.004 –.006 ] [.765±.020] S CL 2X R1.63 [R.064] G 2X 12.70 [.500] 4X R1.52 [R.060] 27.94 [1.100] 19.81±0.20 [.780±.008] 1.02 [.040] CL SPH 1.57 [.062] 3.61±0.38 [.142±.015] 0.0381 [.0015] -A34.04 [1.340] 2 4 8 c-a se s h: -3 0 2 4 8 -2 _ p o _ 9 -F -0 8 Diagram Notes—unless otherwise specified: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S - flange: 2.54 micron [100 microinch] (min) D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 9 of 11 Rev. 02.1, 2009-02-20 PTFA260851E PTFA260851F Confidential, Limited Internal Distribution Package Outline Specifications Package H-31248-2 ( 45° X 2.72 [.107]) C L 2X 4.83±0.51 [.190±.020] D +0.10 LID 9.40 –0.15 [.370+.004 –.006 ] FLANGE 9.78 [.385] CL 19.43±0.51 [.765±.020] G 4X R0.508 +0.381 –0.127 [R.020+.015 –.005] 2X 12.70 [.500] 19.81±0.20 [.780±.008] C L SPH 1.57 [.062] 1.02 [.040] 0.0381 [.0015] -A- S 3.61±0.38 [.142±.015] 20.57 [.810] 248-cases:h- 31248- 2_po Diagram Notes—unless otherwise specified: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S - flange: 2.54 micron [100 microinch] (min) D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 10 of 11 Rev. 02.1, 2009-02-20 PTFA260851E/F Confidential, Limited Internal Distribution Revision History: 2009-02-20 2006-07-21, Preliminary Data Sheet Previous Version: Page Subjects (major changes since last revision) 6, 7 1 Add impedance and circuit information. Increase bandwidth from 2620 – 2680 to 2500 – 2700. 8 Fixed typing error Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International GOLDMOS ® is a registered trademark of Infineon Technologies AG. Edition 2009-02-20 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 11 of 11 Rev. 02.1, 2009-02-20